IndiumV3, Chine, Analysis, bibRecord, 000067

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Identifieur interne : 000067 ( Chine/Analysis ); précédent : 000066; suivant : 000068

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Auteurs : RBID : Pascal:13-0323216

Descripteurs français

Pascal (Inist)
- Couche double, Transistor couche mince, Electrolyte, Revêtement multicouche, Méthode en solution, Addition étain, Bicouche, Evaluation performance, Effet on off, Contrainte électrique, Tension polarisation, Seuil tension, Diagramme énergie, Equation Poisson, Basse tension, Diminution coût, Chitosane, Biopolymère, Matériau hybride organique minéral, Oxyde d'indium, Oxyde de silicium, Matériau dopé, ITO, SiO2.

English descriptors

KwdEn :
- Bias voltage, Bilayers, Biopolymer, Chitosan, Cost lowering, Doped materials, Double layers, Electric stress, Electrolyte, Energy diagram, Growth from solution, Indium oxide, Low voltage, Multilayer coating, On off effect, Organic-inorganic hybrid materials, Performance evaluation, Poisson equation, Silicon oxides, Thin film transistor, Tin addition, Voltage threshold.

Abstract

Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO₂ film (∼5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (∼10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5 × 10⁷), and a smaller bias-stressing threshold voltage shift (ΔV_th = 0.13 V). A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000673
to stream Main, to step Repository: 000299
to stream Chine, to step Extraction: 000067

Links to Exploration step

Pascal:13-0323216

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte</title>
<author><name>JIE JIANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s2>639798, Singapore</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>639798, Singapore</wicri:noRegion>
</affiliation>
</author>
<author><name>QING WAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences</s1>
<s2>Ningbo 315201</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Ningbo 315201</wicri:noRegion>
</affiliation>
</author>
<author><name>QING ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s2>Singapore 639798</s2>
<s3>SGP</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>Singapore 639798</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0323216</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0323216 INIST</idno>
<idno type="RBID">Pascal:13-0323216</idno>
<idno type="wicri:Area/Main/Corpus">000673</idno>
<idno type="wicri:Area/Main/Repository">000299</idno>
<idno type="wicri:Area/Chine/Extraction">000067</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0018-9383</idno>
<title level="j" type="abbreviated">IEEE trans. electron devices</title>
<title level="j" type="main">I.E.E.E. transactions on electron devices</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bias voltage</term>
<term>Bilayers</term>
<term>Biopolymer</term>
<term>Chitosan</term>
<term>Cost lowering</term>
<term>Doped materials</term>
<term>Double layers</term>
<term>Electric stress</term>
<term>Electrolyte</term>
<term>Energy diagram</term>
<term>Growth from solution</term>
<term>Indium oxide</term>
<term>Low voltage</term>
<term>Multilayer coating</term>
<term>On off effect</term>
<term>Organic-inorganic hybrid materials</term>
<term>Performance evaluation</term>
<term>Poisson equation</term>
<term>Silicon oxides</term>
<term>Thin film transistor</term>
<term>Tin addition</term>
<term>Voltage threshold</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche double</term>
<term>Transistor couche mince</term>
<term>Electrolyte</term>
<term>Revêtement multicouche</term>
<term>Méthode en solution</term>
<term>Addition étain</term>
<term>Bicouche</term>
<term>Evaluation performance</term>
<term>Effet on off</term>
<term>Contrainte électrique</term>
<term>Tension polarisation</term>
<term>Seuil tension</term>
<term>Diagramme énergie</term>
<term>Equation Poisson</term>
<term>Basse tension</term>
<term>Diminution coût</term>
<term>Chitosane</term>
<term>Biopolymère</term>
<term>Matériau hybride organique minéral</term>
<term>Oxyde d'indium</term>
<term>Oxyde de silicium</term>
<term>Matériau dopé</term>
<term>ITO</term>
<term>SiO2</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO<sub>2</sub>
 film (∼5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (∼10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5 × 10<sup>7</sup>
), and a smaller bias-stressing threshold voltage shift (ΔV<sub>th</sub>
 = 0.13 V). A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0018-9383</s0>
</fA01>
<fA02 i1="01"><s0>IETDAI</s0>
</fA02>
<fA03 i2="1"><s0>IEEE trans. electron devices</s0>
</fA03>
<fA05><s2>60</s2>
</fA05>
<fA06><s2>6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>JIE JIANG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>QING WAN</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>QING ZHANG</s1>
</fA11>
<fA14 i1="01"><s1>NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s2>639798, Singapore</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences</s1>
<s2>Ningbo 315201</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s2>Singapore 639798</s2>
<s3>SGP</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>1951-1957</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>222F3</s2>
<s5>354000501982340230</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>38 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0323216</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>I.E.E.E. transactions on electron devices</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO<sub>2</sub>
 film (∼5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (∼10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5 × 10<sup>7</sup>
), and a smaller bias-stressing threshold voltage shift (ΔV<sub>th</sub>
 = 0.13 V). A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F04</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Couche double</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Double layers</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Transistor couche mince</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Thin film transistor</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Transistor capa delgada</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Electrolyte</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Electrolyte</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Electrólito</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Revêtement multicouche</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Multilayer coating</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Revestimiento multicapa</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Méthode en solution</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Growth from solution</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Método en solución</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Addition étain</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Bicouche</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Bilayers</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Evaluation performance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Performance evaluation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Evaluación prestación</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Effet on off</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>On off effect</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Efecto on off</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Contrainte électrique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Electric stress</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Tensión eléctrica</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Tension polarisation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Bias voltage</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Voltage polarización</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Seuil tension</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Voltage threshold</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Umbral tensión</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Diagramme énergie</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Energy diagram</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Diagrama energía</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Equation Poisson</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Poisson equation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Ecuación Poisson</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Basse tension</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Low voltage</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Baja tensión</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Diminution coût</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Cost lowering</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Reducción costes</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Chitosane</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Chitosan</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Quitosano</s0>
<s5>22</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Biopolymère</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Biopolymer</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Biopolímero</s0>
<s5>23</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Matériau hybride organique minéral</s0>
<s5>24</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Organic-inorganic hybrid materials</s0>
<s5>24</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>25</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>25</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Oxyde de silicium</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Silicon oxides</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>46</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>46</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>SiO2</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé IV-VI</s0>
<s5>17</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>IV-VI compound</s0>
<s5>17</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto IV-VI</s0>
<s5>17</s5>
</fC07>
<fN21><s1>301</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000067 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 000067 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:13-0323216
   |texte=   Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri